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|Title:||Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction||Authors:||Wong, K.M.
|Issue Date:||2005||Citation:||Wong, K.M., Chim, W.K., Yan, J. (2005). Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction. Applied Physics Letters 87 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2006979||Abstract:||In this letter, the contrast reversal effect in scanning-capacitance- microscopy (SCM) dopant concentration extraction is investigated both theoretically and experimentally. The shift of the turning point in the nonmonotonic response of peak dC/dV signal versus dopant concentration to higher dopant concentrations is explained by the difference of the capture/emission time constant of the interface states and the series resistance of the semiconductor sample. This is verified by comparing the experimental SCM measurements with the simulated peak dC/dV profile on a p-type multiple dopant step sample. The contrast reversal effect, which affects the accuracy of dopant concentration extraction using the SCM peak dC/dV signal, can be minimized by using an overlying oxide with good interfacial quality and a semiconductor sample of low series resistance. © 2005 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57058||ISSN:||00036951||DOI:||10.1063/1.2006979|
|Appears in Collections:||Staff Publications|
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