Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2980276
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dc.titleOptical, magnetic, and transport behaviors of Ge1-x Mnx Te ferromagnetic semiconductors grown by molecular-beam epitaxy
dc.contributor.authorChen, W.Q.
dc.contributor.authorLim, S.T.
dc.contributor.authorSim, C.H.
dc.contributor.authorBi, J.F.
dc.contributor.authorTeo, K.L.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-06-17T03:00:16Z
dc.date.available2014-06-17T03:00:16Z
dc.date.issued2008
dc.identifier.citationChen, W.Q., Lim, S.T., Sim, C.H., Bi, J.F., Teo, K.L., Liew, T., Chong, T.C. (2008). Optical, magnetic, and transport behaviors of Ge1-x Mnx Te ferromagnetic semiconductors grown by molecular-beam epitaxy. Journal of Applied Physics 104 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2980276
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56929
dc.description.abstractThe optical, magnetic, and transport behaviors of Ge1-x Mnx Te (x=0.24 and 0.55) grown by solid-source molecular-beam epitaxy are investigated. X-ray diffraction shows that Ge1-x Mnx Te crystallizes in rocksalt structure. The temperature-dependent magnetization (M-T) for x=0.55 sample gives a Curie paramagnetic temperature of θp ∼180 K, which is consistent with the temperature-dependent resistivity ρ (T) measurement. Anomalous Hall effect is clearly observed in the samples and can be attributed to extrinsic skew scattering based on the scaling relationship of ρ xy ρ xx 1.06. The magnetoresistance of Ge1-x Mnx Te is isotropic and displays a clear hysterestic loop at low temperature, which resembles that of giant-magnetoresistance granular system in solids. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2980276
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1063/1.2980276
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume104
dc.description.issue6
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000260119300088
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