Please use this identifier to cite or link to this item:
Title: On the transient amorphous silicon structures during solid phase crystallization
Authors: Law, F.
Hidayat, H.
Kumar, A. 
Widenborg, P. 
Luther, J. 
Hoex, B. 
Keywords: Amorphous silicon
Fourier transform infrared spectroscopy
In-situ X-ray diffraction
Raman spectroscopy
Solid phase crystallization
Issue Date: 2013
Citation: Law, F., Hidayat, H., Kumar, A., Widenborg, P., Luther, J., Hoex, B. (2013). On the transient amorphous silicon structures during solid phase crystallization. Journal of Non-Crystalline Solids 363 (1) : 172-177. ScholarBank@NUS Repository.
Abstract: Abstract By analyzing the solid phase crystallization (SPC) of amorphous silicon (a-Si) with the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model, it was found that the crystallization kinetics was non-ideal, with indications of a non-constant nucleation rate. Detailed structural analysis of the a-Si material during SPC revealed an increasing bond angle distortion from the ideal crystalline silicon (c-Si) bond angle of 109.5. In addition, infrared measurements indicated a change in SiSi bond polarizability, however its role in the SPC behavior is not clear. The increase in tensile stress, bond angle deviation and bond polarizability together with the increase in crystal fraction may suggest that these parameters could be correlated. © 2012 Elsevier B.V.
Source Title: Journal of Non-Crystalline Solids
ISSN: 00223093
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on May 19, 2018


checked on Oct 1, 2021

Page view(s)

checked on Nov 18, 2021

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.