Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.aop.2012.11.016
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dc.titleNonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization
dc.contributor.authorMa, M.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-06-17T02:58:53Z
dc.date.available2014-06-17T02:58:53Z
dc.date.issued2013-03
dc.identifier.citationMa, M., Jalil, M.B.A., Tan, S.G. (2013-03). Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization. Annals of Physics 330 : 95-103. ScholarBank@NUS Repository. https://doi.org/10.1016/j.aop.2012.11.016
dc.identifier.issn00034916
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56812
dc.description.abstractThe spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads' magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green's function (NEGF) formalism, incorporating the electron-electron interaction in the QD. We provide the first analytical solution for the Green's function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree-Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. © 2012 Elsevier Inc.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.aop.2012.11.016
dc.sourceScopus
dc.subjectQuantum dot
dc.subjectSpin-dependent transport
dc.subjectTunnel magnetoresistance
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.aop.2012.11.016
dc.description.sourcetitleAnnals of Physics
dc.description.volume330
dc.description.page95-103
dc.description.codenAPNYA
dc.identifier.isiut000315129600005
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