Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2885078
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dc.titleMagnetization reversal process in elongated Co rings with engineered defects
dc.contributor.authorGao, X.S.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorRoss, C.A.
dc.date.accessioned2014-06-17T02:56:03Z
dc.date.available2014-06-17T02:56:03Z
dc.date.issued2008
dc.identifier.citationGao, X.S., Adeyeye, A.O., Ross, C.A. (2008). Magnetization reversal process in elongated Co rings with engineered defects. Journal of Applied Physics 103 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2885078
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56566
dc.description.abstractWe report a significant modification of the magnetization reversal process in thin film rings with engineered defects created by a focused ion beam. Using magnetic force microscopy, with in situ in-plane field, we observe that the traditional onion-vortex transition that occurs in defect-free rings can be suppressed, and the reversal instead takes place through domain wall motion. We have also investigated the effects of defect size, location, and distribution on the overall magnetization state. The results are explained in terms of pinning of domain walls by the engineered defects. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2885078
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSINGAPORE-MIT ALLIANCE
dc.description.doi10.1063/1.2885078
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume103
dc.description.issue6
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000254536900074
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