Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3474802
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dc.titleMagnetization reversal and anisotropic magnetoresistance behavior in bicomponent antidot nanostructures
dc.contributor.authorTripathy, D.
dc.contributor.authorVavassori, P.
dc.contributor.authorPorro, J.M.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorSingh, N.
dc.date.accessioned2014-06-17T02:55:59Z
dc.date.available2014-06-17T02:55:59Z
dc.date.issued2010-07-26
dc.identifier.citationTripathy, D., Vavassori, P., Porro, J.M., Adeyeye, A.O., Singh, N. (2010-07-26). Magnetization reversal and anisotropic magnetoresistance behavior in bicomponent antidot nanostructures. Applied Physics Letters 97 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3474802
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56560
dc.description.abstractWe report on the magnetic properties and anisotropic magnetoresistance behavior of engineered bicomponent array of "holes" with alternating diameters embedded in a continuous permalloy film. We observed that the magnetization reversal is significantly altered when compared to a homogeneous array of antidots, and exhibits strong dependence on the permalloy thickness. Our results demonstrate that the use of two antidot sublattices greatly enhances the parameters available for engineering the behavior of antidot nanostructures. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3474802
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3474802
dc.description.sourcetitleApplied Physics Letters
dc.description.volume97
dc.description.issue4
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000281059200065
Appears in Collections:Staff Publications

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