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|Title:||Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors||Authors:||Yin, W.-Y.
On-chip asymmetrically octagonal inductors
|Issue Date:||Jul-2003||Citation:||Yin, W.-Y., Pan, S.J., Li, L.-W., Gan, Y.-B., Lin, F. (2003-07). Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors. IEEE Transactions on Magnetics 39 (4 II) : 2042-2048. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2003.814292||Abstract:||We present a parametric investigation of various groups of on-chip asymmetrically octagonal inductors on silicon substrates. The inductors have different numbers of turns, strip widths, spacings, outer dimensions, and inner radii. Using two-port S parameters measured by a deembedding technique, we derive some local scalable formulas for extrapolating Q factor, resonance frequency, inductance, overlapping, and oxide capacitances of these octagonal inductors with different geometries. The effects of all geometric parameters on Q factor and so forth are explored, analyzed, and compared with each other in detail.||Source Title:||IEEE Transactions on Magnetics||URI:||http://scholarbank.nus.edu.sg/handle/10635/56509||ISSN:||00189464||DOI:||10.1109/TMAG.2003.814292|
|Appears in Collections:||Staff Publications|
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