Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2003.814292

Title:	Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors
Authors:	Yin, W.-Y. Pan, S.J. Li, L.-W. Gan, Y.-B. Lin, F.
Keywords:	Inductance On-chip asymmetrically octagonal inductors Q factor Resonance frequency Scalable formulas
Issue Date:	Jul-2003
Citation:	Yin, W.-Y., Pan, S.J., Li, L.-W., Gan, Y.-B., Lin, F. (2003-07). Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors. IEEE Transactions on Magnetics 39 (4 II) : 2042-2048. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2003.814292
Abstract:	We present a parametric investigation of various groups of on-chip asymmetrically octagonal inductors on silicon substrates. The inductors have different numbers of turns, strip widths, spacings, outer dimensions, and inner radii. Using two-port S parameters measured by a deembedding technique, we derive some local scalable formulas for extrapolating Q factor, resonance frequency, inductance, overlapping, and oxide capacitances of these octagonal inductors with different geometries. The effects of all geometric parameters on Q factor and so forth are explored, analyzed, and compared with each other in detail.
Source Title:	IEEE Transactions on Magnetics
URI:	http://scholarbank.nus.edu.sg/handle/10635/56509
ISSN:	00189464
DOI:	10.1109/TMAG.2003.814292
Appears in Collections:	Staff Publications

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