Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4740085
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dc.titleInvestigation on the optimized design of alternate-hole-defect for 2D phononic crystal based silicon microresonators
dc.contributor.authorWang, N.
dc.contributor.authorHsiao, F.-L.
dc.contributor.authorTsai, J.M.
dc.contributor.authorPalaniapan, M.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorLee, C.
dc.date.accessioned2014-06-17T02:54:18Z
dc.date.available2014-06-17T02:54:18Z
dc.date.issued2012-07-15
dc.identifier.citationWang, N., Hsiao, F.-L., Tsai, J.M., Palaniapan, M., Kwong, D.-L., Lee, C. (2012-07-15). Investigation on the optimized design of alternate-hole-defect for 2D phononic crystal based silicon microresonators. Journal of Applied Physics 112 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4740085
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56413
dc.description.abstractThis paper shows the design, fabrication, and characterization of the Bloch-mode micromechanical resonators made by creating alternate defects to form a resonant cavity on a two-dimensional silicon phononic crystal slab of square lattice. The length of the resonant cavity (L) and the central-hole radius (r′) are varied to optimize the performance of the resonators. CMOS-compatible aluminium nitride is used as the piezoelectric material of the interdigital transducer to launch and detect acoustic waves. The extent of energy confinement within the cavity, as shown by the simulated displacement profiles of the resonators, agrees with the measured Q factors. We also quantitatively analysed the band structure of the proposed resonators and found that the Q factors are generally in an inverse relationship with the standard deviation of the band, due to the slow sound effect brought by flat bands which reduces the energy loss along the lateral direction (Y direction) and enhances the Q factor. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4740085
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4740085
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume112
dc.description.issue2
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000308424500147
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