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https://doi.org/10.1063/1.2884534
Title: | Investigation of the V-pit related morphological and optical properties of InGaNGaN multiple quantum wells | Authors: | Lin, F. Xiang, N. Chen, P. Chow, S.Y. Chua, S.J. |
Issue Date: | 2008 | Citation: | Lin, F., Xiang, N., Chen, P., Chow, S.Y., Chua, S.J. (2008). Investigation of the V-pit related morphological and optical properties of InGaNGaN multiple quantum wells. Journal of Applied Physics 103 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2884534 | Abstract: | In this work, the effects of large V-pits on the morphological and optical properties of InGaNGaN multiple quantum wells (MQWs) were studied using scanning electron microscopy, transmission electron microscopy, and photoluminescence. InGaNGaN MQWs with high-density large V-pits were grown by metal organic chemical vapor deposition. In addition to the regular c -plane MQWs, the MQWs grown on the {10 1- 1} faceted sidewalls of the V-pits were also observed, which gave much higher emission energies than those of the c -plane MQWs. Furthermore, when the lowerature GaN buffer was very thin, the {11 2- m} (m2) faceted sidewalls of the V-pits were observed. It was then found that MQWs grown on such sidewalls had emission energies between those of the c -plane MQWs and those of the {10 1- 1} faceted sidewall MQWs. © 2008 American Institute of Physics. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/56406 | ISSN: | 00218979 | DOI: | 10.1063/1.2884534 |
Appears in Collections: | Staff Publications |
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