Please use this identifier to cite or link to this item:
|Title:||Investigation of in situ trench etching process and Bosch process for fabricating high-aspect-ratio beams for microelectromechanical systems||Authors:||Kok, K.W.
|Issue Date:||Sep-2002||Citation:||Kok, K.W., Yoo, W.J., Sooriakumar, K., Pan, J.S., Lee, E.Y. (2002-09). Investigation of in situ trench etching process and Bosch process for fabricating high-aspect-ratio beams for microelectromechanical systems. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (5) : 1878-1883. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1501583||Abstract:||The in situ process and the Bosch process were compared for etching rates, etching profiles, and sidewall properties. As such, the Bosch process was found to be advantageous over the in situ process in achieving anisotropic etching profiles at high etching rates, due to selective deposition on the sidewall. The in situ process was advantageous over the Bosch process in forming small sized MEMS structures, since it avoided scallops and undercuts on the sidewall.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/56399||ISSN:||10711023||DOI:||10.1116/1.1501583|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 23, 2020
WEB OF SCIENCETM
checked on Oct 15, 2020
checked on Oct 24, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.