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|Title:||Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method||Authors:||Yiang, K.Y.
|Issue Date:||21-Jul-2003||Citation:||Yiang, K.Y., Yoo, W.J., Guo, Q., Krishnamoorthy, A. (2003-07-21). Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method. Applied Physics Letters 83 (3) : 524-526. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592618||Abstract:||Electron conduction in carbon-doped silicon oxide was discussed. Voltage ramp method was used in an electric field range of 0 MV/cm to the breakdown field at 300 K. Results showed the presence and role of electron traps in the conduction of SiOC.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56398||ISSN:||00036951||DOI:||10.1063/1.1592618|
|Appears in Collections:||Staff Publications|
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