Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/56331
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dc.titleInfluence of symmetry breaking in pentamers on Fano resonance and near-field energy localization
dc.contributor.authorRahmani, M.
dc.contributor.authorLukiyanchuk, B.
dc.contributor.authorNguyen, T.T.V.
dc.contributor.authorTahmasebi, T.
dc.contributor.authorLin, Y.
dc.contributor.authorLiew, T.Y.F.
dc.contributor.authorHong, M.H.
dc.date.accessioned2014-06-17T02:53:23Z
dc.date.available2014-06-17T02:53:23Z
dc.date.issued2011-12-01
dc.identifier.citationRahmani, M.,Lukiyanchuk, B.,Nguyen, T.T.V.,Tahmasebi, T.,Lin, Y.,Liew, T.Y.F.,Hong, M.H. (2011-12-01). Influence of symmetry breaking in pentamers on Fano resonance and near-field energy localization. Optical Materials Express 1 (8) : 1409-1415. ScholarBank@NUS Repository.
dc.identifier.issn21593930
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56331
dc.description.abstractArrays of asymmetric pentamers are designed and fabricated with an offset of the central nano-disk position to study the effect of symmetry breaking in pentamers. It is found that while planar symmetric oligomers can exhibit a single Fano Resonance (FR), an offset of the central nano-disk at a controlled gap of 3 nm from the nearest neighbor nano-disk, gives rise to the appearance of an additional dark mode that can potentially be used in localized surface plasmon resonance sensing. It is shown that this mode leads to the appearance of the second FR in the same spectrum. The simulation results are in a good agreement with experimental data. Furthermore, it is found that unique near-field energy distribution in the asymmetric pentamers can be well tuned to be localized at one, two or three of the four subwavelength gaps of the pentamer selectively by only changing the polarization orientation of a single light source. © 2011 Optical Society of America.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleOptical Materials Express
dc.description.volume1
dc.description.issue8
dc.description.page1409-1415
dc.identifier.isiutNOT_IN_WOS
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