Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4821204
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dc.titleImprovement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
dc.contributor.authorSeetoh, I.P.
dc.contributor.authorSoh, C.B.
dc.contributor.authorZhang, L.
dc.contributor.authorPatrick Tung, K.H.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorJin Chua, S.
dc.date.accessioned2014-06-17T02:52:52Z
dc.date.available2014-06-17T02:52:52Z
dc.date.issued2013-09-16
dc.identifier.citationSeetoh, I.P., Soh, C.B., Zhang, L., Patrick Tung, K.H., Fitzgerald, E.A., Jin Chua, S. (2013-09-16). Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers. Applied Physics Letters 103 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4821204
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56286
dc.description.abstractInN was grown over nanoporous GaN by metal-organic chemical vapor deposition. Additional free surfaces in the numerous GaN nanopores reduced the surface energy and encouraged extensive nucleation and uniform growth of InN nanoislands. Conversely, coarse and poorly distributed InN islands grew on planar GaN surfaces. Non-radiative Shockley-Read-Hall recombination rates were significantly lower in InN grown on nanoporous GaN than those on planar GaN, leading to the internal quantum efficiency increasing from 3% to 20%. This is attributed to the reorientation of InN during growth over the underlying nanoporous GaN, which relieved misfit stress and reduced defects associated with Shockley-Read-Hall recombination. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4821204
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4821204
dc.description.sourcetitleApplied Physics Letters
dc.description.volume103
dc.description.issue12
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000324826000022
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