Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2803762
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dc.titleImpact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorFang, W.-W.
dc.contributor.authorLiu, F.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorSamudra, G.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-06-17T02:52:38Z
dc.date.available2014-06-17T02:52:38Z
dc.date.issued2007
dc.identifier.citationLim, A.E.-J., Fang, W.-W., Liu, F., Lee, R.T.P., Samudra, G., Kwong, D.-L., Yeo, Y.-C. (2007). Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers. Applied Physics Letters 91 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2803762
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56264
dc.description.abstractThe mechanism underlying the modulation of nickel fully silicided (Ni-FUSI) gate work function m by rare-earth (RE)-based dielectric interlayers (RE: Y, Er, Dy, Tb, Yb, and La) was investigated. RE-O-Si bonding in these ultrathin (∼1 nm) interlayers induces highly polarized RE-O bonds at the gate/dielectric interface. The relative magnitude of the RE-O dipole was estimated from the product of the net electronegativity difference and the charge separation between the RE and O ions. Excellent correlation of the modulated Ni-FUSI m with the calculated dipole moment was shown. The proposed quantitative interfacial dipole model could be used for the selection of interlayer materials for further m optimization and precise control of threshold voltage in transistors. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2803762
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2803762
dc.description.sourcetitleApplied Physics Letters
dc.description.volume91
dc.description.issue17
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000250468200050
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