Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2171827
DC FieldValue
dc.titleFull silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorTung, C.H.
dc.contributor.authorTripathy, S.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-06-17T02:50:42Z
dc.date.available2014-06-17T02:50:42Z
dc.date.issued2006-04
dc.identifier.citationLim, A.E.-J., Lee, R.T.P., Tung, C.H., Tripathy, S., Kwong, D.-L., Yeo, Y.-C. (2006-04). Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications. Journal of the Electrochemical Society 153 (4) : G337-G340. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2171827
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56098
dc.description.abstractThe full silicidation of silicon gate electrodes using Ni-Tb alloy was investigated for metal oxide semiconductor field effect transistor (MOSFET) applications. Results showed that a dual-layer silicide gate consisting of a top NiTb silicide layer and a bottom NiSi layer was formed. Full silicidation using Ni0.8 Tb0.2 resulted in a gate work function of 4.41 eV. This is lower than a work function of 4.68 eV obtained from full Ni silicidation. The work function lowering was linked to structural changes in the underlying NiSi layer. No physical or electrical degradation was observed after forming gas annealing at 420°C for 30 min. NiTb-silicided gate electrodes have work functions suitable for application in advanced transistor structures. © 2006 The Electrochemical Society. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2171827
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.2171827
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume153
dc.description.issue4
dc.description.pageG337-G340
dc.description.codenJESOA
dc.identifier.isiut000235723600059
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

13
checked on Feb 17, 2020

WEB OF SCIENCETM
Citations

15
checked on Feb 10, 2020

Page view(s)

59
checked on Feb 18, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.