Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3690941
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dc.titleFormation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature
dc.contributor.authorLiu, Z.Q.
dc.contributor.authorChim, W.K.
dc.contributor.authorChiam, S.Y.
dc.contributor.authorPan, J.S.
dc.contributor.authorNg, C.M.
dc.date.accessioned2014-06-17T02:50:32Z
dc.date.available2014-06-17T02:50:32Z
dc.date.issued2012-02-27
dc.identifier.citationLiu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2012-02-27). Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature. Applied Physics Letters 100 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690941
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56083
dc.description.abstractUnderstanding interfacial phenomena is crucial for precise control in the growth of materials for advanced semiconductor devices. A systematic in situ coverage dependent study is conducted to study the Schottky barrier evolution and chemical reactions at the yttrium/germanium interface. Adatom-induced band bending is present in the early growth stages while metal-induced gap states resulted in strong Fermi level pinning at larger yttrium (Y) thicknesses. Furthermore, significant intermixing occurs at 3 Å thickness of Y and saturates at 17Å of Y. The underlying mechanism behind this self-limiting intermixing is well-described by a combination of chemical bond and metal-induced weakening theories. The implications of our findings on device performance are discussed. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3690941
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3690941
dc.description.sourcetitleApplied Physics Letters
dc.description.volume100
dc.description.issue9
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000301504800032
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