Please use this identifier to cite or link to this item:
|Title:||Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature||Authors:||Liu, Z.Q.
|Issue Date:||27-Feb-2012||Citation:||Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2012-02-27). Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature. Applied Physics Letters 100 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690941||Abstract:||Understanding interfacial phenomena is crucial for precise control in the growth of materials for advanced semiconductor devices. A systematic in situ coverage dependent study is conducted to study the Schottky barrier evolution and chemical reactions at the yttrium/germanium interface. Adatom-induced band bending is present in the early growth stages while metal-induced gap states resulted in strong Fermi level pinning at larger yttrium (Y) thicknesses. Furthermore, significant intermixing occurs at 3 Å thickness of Y and saturates at 17Å of Y. The underlying mechanism behind this self-limiting intermixing is well-described by a combination of chemical bond and metal-induced weakening theories. The implications of our findings on device performance are discussed. © 2012 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56083||ISSN:||00036951||DOI:||10.1063/1.3690941|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 7, 2021
WEB OF SCIENCETM
checked on Apr 29, 2021
checked on May 5, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.