Please use this identifier to cite or link to this item:
https://doi.org/10.1002/pssa.201228643
DC Field | Value | |
---|---|---|
dc.title | Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method | |
dc.contributor.author | Sang, N.X. | |
dc.contributor.author | Beng, T.C. | |
dc.contributor.author | Jie, T. | |
dc.contributor.author | Fitzgerald, E.A. | |
dc.contributor.author | Jin, C.S. | |
dc.date.accessioned | 2014-06-17T02:49:27Z | |
dc.date.available | 2014-06-17T02:49:27Z | |
dc.date.issued | 2013-08 | |
dc.identifier.citation | Sang, N.X., Beng, T.C., Jie, T., Fitzgerald, E.A., Jin, C.S. (2013-08). Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method. Physica Status Solidi (A) Applications and Materials Science 210 (8) : 1618-1623. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.201228643 | |
dc.identifier.issn | 18626300 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55990 | |
dc.description.abstract | Zinc oxide (ZnO) is a wide-bandgap material with excellent optical properties for optoelectronics applications. ZnO nanostructures are attractive for research because it is easy to fabricate in single-crystalline form and it has interesting physical properties at the nanoscale. In this paper, we report our successful growth of a p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diode (LED). The heterojunction LED shows its advantages over a p-ZnO film/n-GaN film heterojunction. The LED demonstrates a rectifying I-V characteristics with a turn-on voltage of 2.7 V. The ideality factor is 6.5. The existences of interface charges in the interface are the reason for this low turn-on voltage and high ideality factor in the heterojunction. Electroluminescence (EL) spectra of the LED consist of an ultraviolet peak at 378 nm and a broad yellow emission centered at 560 nm. Fitting and comparing EL of the LED with PL of p-ZnO and n-GaN show that p-ZnO contributes more to the EL than n-GaN. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pssa.201228643 | |
dc.source | Scopus | |
dc.subject | GaN | |
dc.subject | heterojunctions | |
dc.subject | light-emitting diodes | |
dc.subject | nanorods | |
dc.subject | solution deposition | |
dc.subject | ZnO | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1002/pssa.201228643 | |
dc.description.sourcetitle | Physica Status Solidi (A) Applications and Materials Science | |
dc.description.volume | 210 | |
dc.description.issue | 8 | |
dc.description.page | 1618-1623 | |
dc.description.coden | PSSAB | |
dc.identifier.isiut | 000327709700023 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.