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https://doi.org/10.1063/1.3657778
DC Field | Value | |
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dc.title | Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures | |
dc.contributor.author | Liu, Z.Q. | |
dc.contributor.author | Chim, W.K. | |
dc.contributor.author | Chiam, S.Y. | |
dc.contributor.author | Pan, J.S. | |
dc.contributor.author | Ng, C.M. | |
dc.date.accessioned | 2014-06-17T02:48:34Z | |
dc.date.available | 2014-06-17T02:48:34Z | |
dc.date.issued | 2011-11-01 | |
dc.identifier.citation | Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2011-11-01). Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures. Journal of Applied Physics 110 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3657778 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55915 | |
dc.description.abstract | In this work, photoelectron spectroscopy is used to characterize the band alignment of lanthanum aluminate heterostructures which possess a wide range of potential applications. It is found that our experimental slope parameter agrees with theory using the metal-induced gap states model while the interface induced gap states (IFIGS) model yields unsatisfactory results. We show that this discrepancy can be attributed to the correlation between the dielectric work function and the electronegativity in the IFIGS model. It is found that the original trend, as established largely by metals, may not be accurate for larger band gap materials. By using a new correlation, our experimental data shows good agreement of the slope parameter using the IFIGS model. This correlation, therefore, plays a crucial role in heterostructures involving wider bandgap materials for accurate band alignment prediction using the IFIGS model. © 2011 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3657778 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.3657778 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 110 | |
dc.description.issue | 9 | |
dc.description.page | - | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000297062100041 | |
Appears in Collections: | Staff Publications |
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