Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3657778
DC FieldValue
dc.titleEvaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures
dc.contributor.authorLiu, Z.Q.
dc.contributor.authorChim, W.K.
dc.contributor.authorChiam, S.Y.
dc.contributor.authorPan, J.S.
dc.contributor.authorNg, C.M.
dc.date.accessioned2014-06-17T02:48:34Z
dc.date.available2014-06-17T02:48:34Z
dc.date.issued2011-11-01
dc.identifier.citationLiu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2011-11-01). Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures. Journal of Applied Physics 110 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3657778
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55915
dc.description.abstractIn this work, photoelectron spectroscopy is used to characterize the band alignment of lanthanum aluminate heterostructures which possess a wide range of potential applications. It is found that our experimental slope parameter agrees with theory using the metal-induced gap states model while the interface induced gap states (IFIGS) model yields unsatisfactory results. We show that this discrepancy can be attributed to the correlation between the dielectric work function and the electronegativity in the IFIGS model. It is found that the original trend, as established largely by metals, may not be accurate for larger band gap materials. By using a new correlation, our experimental data shows good agreement of the slope parameter using the IFIGS model. This correlation, therefore, plays a crucial role in heterostructures involving wider bandgap materials for accurate band alignment prediction using the IFIGS model. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3657778
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3657778
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume110
dc.description.issue9
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000297062100041
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

11
checked on Jun 14, 2021

WEB OF SCIENCETM
Citations

12
checked on Jun 14, 2021

Page view(s)

81
checked on Jun 10, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.