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Title: Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials
Authors: Wang, W.
Loke, D.
Shi, L.
Zhao, R.
Yang, H.
Law, L.-T.
Ng, L.-T.
Lim, K.-G.
Yeo, Y.-C. 
Chong, T.-C.
Lacaita, A.L.
Issue Date: 2012
Citation: Wang, W., Loke, D., Shi, L., Zhao, R., Yang, H., Law, L.-T., Ng, L.-T., Lim, K.-G., Yeo, Y.-C., Chong, T.-C., Lacaita, A.L. (2012). Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials. Scientific Reports 2 : -. ScholarBank@NUS Repository.
Abstract: The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation-or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.
Source Title: Scientific Reports
ISSN: 20452322
DOI: 10.1038/srep00360
Appears in Collections:Staff Publications

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