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Title: Electrical conductance tuning and bistable switching in poly(N-vinylcarbazole)-Carbon nanotube composite films
Authors: Liu, G.
Ling, Q.-D.
Teo, E.Y.H. 
Zhu, C.-X. 
Chan, D.S.-H. 
Neoh, K.-G.
Kang, E.-T.
Keywords: Carbon nanotube
Charge trapping
Conductance switching
Issue Date: 28-Jul-2009
Citation: Liu, G., Ling, Q.-D., Teo, E.Y.H., Zhu, C.-X., Chan, D.S.-H., Neoh, K.-G., Kang, E.-T. (2009-07-28). Electrical conductance tuning and bistable switching in poly(N-vinylcarbazole)-Carbon nanotube composite films. ACS Nano 3 (7) : 1929-1937. ScholarBank@NUS Repository.
Abstract: By varying the carbon nanotube (CNT) content in poly(N-vinylcarbazole) (PVK) composite thin films, the electrical conductance behavior of an indium-tin oxide/PVK-CNT/aluminum (ITO/PVK-CNT/Al) sandwich structure can be tuned in a controlled manner. Distinctly different electrical conductance behaviors, such as (i) insulator behavior, (ii) bistable electrical conductance switching effects (write-once read-many-times (WORM) memory effect and rewritable memory effect), and (iii) conductor behavior, are discernible from the current density-voltage characteristics of the composite films. The turn-on voltage of the two bistable conductance switching devices decreases and the ON/OFF state current ratio of the WORM device increases with the increase in CNT content of the composite film. Both the WORM and rewritable devices are stable under a constant voltage stress or a continuous pulse voltage stress, with an ON/OFF state current ratio in excess of 103. The conductance switching effects of the composite films have been attributed to electron trapping in the CNTs of the electron-donating/hole-transporting PVK matrix. ©2009 American Chemical Society.
Source Title: ACS Nano
ISSN: 19360851
DOI: 10.1021/nn900319q
Appears in Collections:Staff Publications

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