Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2798868
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dc.titleEffects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering
dc.contributor.authorLiu, H.F.
dc.contributor.authorChua, S.J.
dc.contributor.authorHu, G.X.
dc.contributor.authorGong, H.
dc.contributor.authorXiang, N.
dc.date.accessioned2014-06-17T02:47:02Z
dc.date.available2014-06-17T02:47:02Z
dc.date.issued2007
dc.identifier.citationLiu, H.F., Chua, S.J., Hu, G.X., Gong, H., Xiang, N. (2007). Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering. Journal of Applied Physics 102 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2798868
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55780
dc.description.abstractX-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al2 O3 (0002) (c -plane), and Al2 O3 (1 1- 02) (r -plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c -axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c -plane Al2 O3 substrate while a ZnO (11 2- 0) single crystal is formed on an r -plane Al2 O3 substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnOGaAs (001), ZnOGaAs (111), and ZnO Al2 O3 (0002), while the photoluminescence from ZnO Al2 O3 (1 1- 02) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO (11 2- 0). © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2798868
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2798868
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume102
dc.description.issue8
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000250589300046
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