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|Title:||Effects of media stray field on electromigration characteristics in current-perpendicular-to-plane giant magnetoresistance spin-valve read sensors||Authors:||Gui Zeng, D.
|Issue Date:||1-May-2012||Citation:||Gui Zeng, D., Lee, K.-I., Chung, K.-W., Bae, S. (2012-05-01). Effects of media stray field on electromigration characteristics in current-perpendicular-to-plane giant magnetoresistance spin-valve read sensors. Journal of Applied Physics 111 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4712059||Abstract:||Effects of magnetic stray field retrieved from both longitudinal and perpendicular magnetic recording media (denoted by media stray field) on electromigration (EM) characteristics of current-perpendicular-to-plane (CPP) giant magnetoresistance spin-valve (GMR SV) read sensors have been numerically studied to explore the electrical and magnetic stability of the read sensor under real operation. The mean-time-to-failure (MTTF) of the CPP GMR SV read sensors was found to have a strong dependence on the physical parameters of the recording media and recorded information status, such as the pulse width of media stray field, the bit length, and the head moving velocity. According to the numerical calculation results, it was confirmed that in the longitudinal media, the shorter the stray field pulse width (i.e., the sharper the media transition) allows for the longer MTTF of the CPP GMR SV read sensors; while in the perpendicular media, the sharper the media transition gives rise to a shorter MTTF. Interestingly, it was also revealed that the MTTF could be improved by reducing the bit length as well as increasing the head velocity in both longitudinal and perpendicular media. Furthermore, the bit distribution patterns, especially the number of consecutive 0' bits strongly affected the MTTF of GMR SV read sensors. The strong dependences of MTTF on the media stray field during CPP GMR SV sensor operation are thought to be mainly attributed to the thermal cycling (temperature rise and fall) caused by the resistance change due to GMR effects. © 2012 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/55777||ISSN:||00218979||DOI:||10.1063/1.4712059|
|Appears in Collections:||Staff Publications|
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