Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.75.012403
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dc.titleEffect of spacer layer thickness on the magnetic and magnetotransport properties of Fe3 O4 Cu Ni80 Fe20 spin valve structures
dc.contributor.authorTripathy, D.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorShannigrahi, S.
dc.date.accessioned2014-06-17T02:46:50Z
dc.date.available2014-06-17T02:46:50Z
dc.date.issued2007
dc.identifier.citationTripathy, D., Adeyeye, A.O., Shannigrahi, S. (2007). Effect of spacer layer thickness on the magnetic and magnetotransport properties of Fe3 O4 Cu Ni80 Fe20 spin valve structures. Physical Review B - Condensed Matter and Materials Physics 75 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.75.012403
dc.identifier.issn10980121
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55763
dc.description.abstractWe present a systematic and detailed study of the magnetization reversal process and magnetotransport properties of Fe3 O4 Cu (tCu) Ni80 Fe20 spin valve structures. A drastic change was observed in both the magnetic and transport properties as the thickness of the Cu spacer layer tCu was varied in the range 2 nm≤ tCu ≤30 nm. For tCu =2 nm, the transport properties are mainly due to anisotropic magnetoresistance effects because of strong exchange coupling between the Ni80 Fe20 and Fe3 O4 layers. For tCu ≥5 nm, however, the transport properties are dominated by positive giant magnetoresistance (GMR) effects due to separate magnetization switching of the two magnetic layers. The GMR ratio decreases with increasing spacer layer thickness due to enhanced current shunting and scattering effects. We also observed that the GMR ratio has strong temperature dependence and decreases with increasing temperature due to spin flip scattering and electron-magnon interactions. © 2007 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.75.012403
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1103/PhysRevB.75.012403
dc.description.sourcetitlePhysical Review B - Condensed Matter and Materials Physics
dc.description.volume75
dc.description.issue1
dc.description.page-
dc.description.codenPRBMD
dc.identifier.isiut000243894600014
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