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|Title:||Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation||Authors:||Chim, W.K.
|Issue Date:||24-Jun-2002||Citation:||Chim, W.K., Wong, K.M., Teo, Y.L., Lei, Y., Yeow, Y.T. (2002-06-24). Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation. Applied Physics Letters 80 (25) : 4837-4839. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1487899||Abstract:||This article proposes a more accurate approach to dopant extraction using combined inverse modeling and forward simulation of scanning capacitance microscopy (SCM) measurements on p-n junctions. The approach takes into account the essential physics of minority carrier response to the SCM probe tip in the presence of lateral electric fields due to a p-n junction. The effects of oxide fixed charge and interface state densities in the grown oxide layer on the p-n junction samples were considered in the proposed method. The extracted metallurgical and electrical junctions were compared to the apparent electrical junction obtained from SCM measurements. © 2002 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/55693||ISSN:||00036951||DOI:||10.1063/1.1487899|
|Appears in Collections:||Staff Publications|
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