Design and fabrication of subwavelength nanogratings based light-emitting diodes

Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-011-6295-2

Title:	Design and fabrication of subwavelength nanogratings based light-emitting diodes
Authors:	Zhang, L. Teng, J. Chua, S.J. Fitzgerald, E.A.
Issue Date:	Jun-2011
Citation:	Zhang, L., Teng, J., Chua, S.J., Fitzgerald, E.A. (2011-06). Design and fabrication of subwavelength nanogratings based light-emitting diodes. Applied Physics A: Materials Science and Processing 103 (3) : 827-830. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-011-6295-2
Abstract:	Linearly polarized light from InGaN green light emitting diode grown on (0001) oriented sapphire is demonstrated by using subwavelength metallic nanogratings. Polarization ratio can reach 7:1 (∼88%), the highest ever reported from a single light emitting device. We discuss the design and fabrication of this device in detail. © 2011 Springer-Verlag.
Source Title:	Applied Physics A: Materials Science and Processing
URI:	http://scholarbank.nus.edu.sg/handle/10635/55541
ISSN:	09478396
DOI:	10.1007/s00339-011-6295-2
Appears in Collections:	Staff Publications

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