Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.72.064439
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dc.titleCurrent-induced magnetization switching in pseudo-spin-valve multilayers with and without a Ru capping layer
dc.contributor.authorGuo, J.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorJiang, Y.
dc.date.accessioned2014-06-17T02:43:38Z
dc.date.available2014-06-17T02:43:38Z
dc.date.issued2005-08-01
dc.identifier.citationGuo, J., Jalil, M.B.A., Jiang, Y. (2005-08-01). Current-induced magnetization switching in pseudo-spin-valve multilayers with and without a Ru capping layer. Physical Review B - Condensed Matter and Materials Physics 72 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.72.064439
dc.identifier.issn10980121
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55487
dc.description.abstractWe analyze the spin-current transport in a Co/Cu/Co pseudo-spin-valve (PSV) structure, with and without a Ru cap layer. The resultant spin torque in the PSV and the critical current for switching are evaluated by considering the absorbed transverse spin current at the interfacial zones, spin-dependent transmission and the reflection probabilities across the interfaces, and the spin-diffusion process within the Cu spacer layer. The presence of a Ru cap layer leads to a reduction of the critical current density (by a factor of 1.5), in close agreement with experimental data. Based on our model, several methods are suggested to obtain further reduction in the critical current density, necessary for future applications in spintronic devices. © 2005 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.72.064439
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1103/PhysRevB.72.064439
dc.description.sourcetitlePhysical Review B - Condensed Matter and Materials Physics
dc.description.volume72
dc.description.issue6
dc.description.page-
dc.description.codenPRBMD
dc.identifier.isiut000231564400106
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