Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2803720
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dc.titleCurrent-induced magnetization reversal mechanisms of pseudospin valves with perpendicular anisotropy
dc.contributor.authorGuo, J.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorBae, S.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-06-17T02:43:37Z
dc.date.available2014-06-17T02:43:37Z
dc.date.issued2007
dc.identifier.citationGuo, J., Jalil, M.B.A., Bae, S., Tan, S.G. (2007). Current-induced magnetization reversal mechanisms of pseudospin valves with perpendicular anisotropy. Journal of Applied Physics 102 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2803720
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55486
dc.description.abstractWe present a numerical simulation of current-induced magnetization switching (CIMS) in pseudospin-valve (PSV) structures exhibiting perpendicular anisotropy. The PSV structures consist of a reference layer of Co/Pt and Co/Ni multilayers and a free layer composed of Co/Ni multilayers. The spin torque induced by the passage of a spin-polarized current is modeled by means of a modified Landau-Lifshitz-Gilbert equation, which incorporates two additional spin-torque terms. Numerical micromagnetic simulations of the magnetization switching process predict a critical current density of the order of 107 A cm2, a value consistent with available experimental results. In addition, we investigate the influence of the current sweep rate and the ratio of the in-plane and out-of-plane torque coefficients on the stability of the magnetization switching process. Our analysis provides a useful guide for optimal utilization of the CIMS effect in perpendicularly magnetized multilayers, for use in prospective spintronic applications. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2803720
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1063/1.2803720
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume102
dc.description.issue9
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000250983700055
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