Please use this identifier to cite or link to this item: https://doi.org/10.1109/TSM.2007.907610
DC FieldValue
dc.titleCritical dimension uniformity via real-time photoresist thickness control
dc.contributor.authorHo, W.K.
dc.contributor.authorTay, A.
dc.contributor.authorChen, M.
dc.contributor.authorFu, J.
dc.contributor.authorLu, H.
dc.contributor.authorShan, X.
dc.date.accessioned2014-06-17T02:43:28Z
dc.date.available2014-06-17T02:43:28Z
dc.date.issued2007-11
dc.identifier.citationHo, W.K., Tay, A., Chen, M., Fu, J., Lu, H., Shan, X. (2007-11). Critical dimension uniformity via real-time photoresist thickness control. IEEE Transactions on Semiconductor Manufacturing 20 (4) : 376-380. ScholarBank@NUS Repository. https://doi.org/10.1109/TSM.2007.907610
dc.identifier.issn08946507
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55472
dc.description.abstractIn this paper, we present the experimental results on wafer-to-wafer and within-wafer critical dimension (CD) control. It is known that photoresist thickness affects CD. In this paper, we control photoresist thickness to control CD. As opposed to run-to-run control where information from the previous wafer or batch is used for control of the current wafer or batch, the approach here is real time and makes use of the current wafer information for control of the current wafer CD. The experiments demonstrate that such an approach can reduce CD nonuniformity wafer to wafer and within wafer. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TSM.2007.907610
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TSM.2007.907610
dc.description.sourcetitleIEEE Transactions on Semiconductor Manufacturing
dc.description.volume20
dc.description.issue4
dc.description.page376-380
dc.description.codenITSME
dc.identifier.isiut000250929200005
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