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|Title:||Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate||Authors:||Ning, J.
|Issue Date:||Feb-2009||Citation:||Ning, J., Xu, S., Wang, R., Zhang, F., Le, H., Chua, S. (2009-02). Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate. Japanese Journal of Applied Physics 48 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.48.021102||Abstract:||Vertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as -0.94. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate. © 2009 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/55451||ISSN:||00214922||DOI:||10.1143/JJAP.48.021102|
|Appears in Collections:||Staff Publications|
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