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Please use this identifier to cite or link to this item: https://doi.org/10.1049/el:20083116
DC FieldValue
dc.titleCompact HSPICE model for IMOS device
dc.contributor.authorLin, J.
dc.contributor.authorToh, E.H.
dc.contributor.authorShen, C.
dc.contributor.authorSylvester, D.
dc.contributor.authorHeng, C.H.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.C.
dc.date.accessioned2014-06-17T02:42:02Z
dc.date.available2014-06-17T02:42:02Z
dc.date.issued2008
dc.identifier.citationLin, J., Toh, E.H., Shen, C., Sylvester, D., Heng, C.H., Samudra, G., Yeo, Y.C. (2008). Compact HSPICE model for IMOS device. Electronics Letters 44 (2) : 91-92. ScholarBank@NUS Repository. https://doi.org/10.1049/el:20083116
dc.identifier.issn00135194
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55345
dc.description.abstractA compact HSPICE model has been developed for the newly proposed impact-ionisation MOS (IMOS) device for circuit simulation. Table lookup dependent sources and passive components have been employed to model the IMOS device. The approach shows good accuracy compared to time-consuming and non-scalable TCAD simulation of IMOS-based circuits. © The Institution of Engineering and Technology 2008.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1049/el:20083116
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1049/el:20083116
dc.description.sourcetitleElectronics Letters
dc.description.volume44
dc.description.issue2
dc.description.page91-92
dc.description.codenELLEA
dc.identifier.isiut000252959500016
Appears in Collections:Staff Publications

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