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|Title:||Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions||Authors:||Sahadevan, A.M.
|Issue Date:||23-Jul-2012||Citation:||Sahadevan, A.M., Tiwari, R.K., Kalon, G., Bhatia, C.S., Saeys, M., Yang, H. (2012-07-23). Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions. Applied Physics Letters 101 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4738787||Abstract:||We study the effect of strain on magnetic tunnel junctions induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain. © 2012 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/55201||ISSN:||00036951||DOI:||10.1063/1.4738787|
|Appears in Collections:||Staff Publications|
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