Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2006.11.281
DC FieldValue
dc.titleAnneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
dc.contributor.authorLiu, H.F.
dc.contributor.authorXiang, N.
dc.contributor.authorZhou, H.L.
dc.contributor.authorChua, S.J.
dc.contributor.authorYang, P.
dc.contributor.authorMoser, H.O.
dc.date.accessioned2014-06-17T02:39:23Z
dc.date.available2014-06-17T02:39:23Z
dc.date.issued2007-04
dc.identifier.citationLiu, H.F., Xiang, N., Zhou, H.L., Chua, S.J., Yang, P., Moser, H.O. (2007-04). Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth 301-302 (SPEC. ISS.) : 548-551. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2006.11.281
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55118
dc.description.abstractTwo types of multiple quantum wells (MQWs) have been grown by means of molecular beam epitaxy; one is GaInAs/GaAs and the other is GaInNAs/GaNAs. Deteriorated structural qualities were observed in the GaInNAs/GaNAs MQWs with a low N concentration as compared to the N-free MQWs grown at the same conditions; an increase of N content within the QWs avoids the structure deterioration. The evolution of X-ray diffraction patterns, due to post-growth thermal annealing indicates that In/Ga interdiffusions occurred in both types of MQWs at elevated temperatures. The diffusion length deduced from the dynamic simulations shows a decrease with the increase of N concentration. The interfaces roughness plays a minor role in the interdiffusion. The thermal stabilities of GaInNAs/GaNAs MQW structures are improved by the incorporation of N. © 2007 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2006.11.281
dc.sourceScopus
dc.subjectA1. High-resolution X-ray diffraction
dc.subjectA1. Rapid thermal annealing
dc.subjectA3. Molecular beam epitaxy
dc.subjectB2. Semiconducting III-V materials
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.description.doi10.1016/j.jcrysgro.2006.11.281
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume301-302
dc.description.issueSPEC. ISS.
dc.description.page548-551
dc.description.codenJCRGA
dc.identifier.isiut000246015800126
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Jun 22, 2022

WEB OF SCIENCETM
Citations

4
checked on Jun 22, 2022

Page view(s)

164
checked on Jun 23, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.