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Title: Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
Authors: Liu, H.F. 
Xiang, N. 
Zhou, H.L.
Chua, S.J.
Yang, P. 
Moser, H.O. 
Keywords: A1. High-resolution X-ray diffraction
A1. Rapid thermal annealing
A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
Issue Date: Apr-2007
Citation: Liu, H.F., Xiang, N., Zhou, H.L., Chua, S.J., Yang, P., Moser, H.O. (2007-04). Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth 301-302 (SPEC. ISS.) : 548-551. ScholarBank@NUS Repository.
Abstract: Two types of multiple quantum wells (MQWs) have been grown by means of molecular beam epitaxy; one is GaInAs/GaAs and the other is GaInNAs/GaNAs. Deteriorated structural qualities were observed in the GaInNAs/GaNAs MQWs with a low N concentration as compared to the N-free MQWs grown at the same conditions; an increase of N content within the QWs avoids the structure deterioration. The evolution of X-ray diffraction patterns, due to post-growth thermal annealing indicates that In/Ga interdiffusions occurred in both types of MQWs at elevated temperatures. The diffusion length deduced from the dynamic simulations shows a decrease with the increase of N concentration. The interfaces roughness plays a minor role in the interdiffusion. The thermal stabilities of GaInNAs/GaNAs MQW structures are improved by the incorporation of N. © 2007 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2006.11.281
Appears in Collections:Staff Publications

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