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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3532849
DC FieldValue
dc.titleAmbipolar bistable switching effect of graphene
dc.contributor.authorShin, Y.J.
dc.contributor.authorKwon, J.H.
dc.contributor.authorKalon, G.
dc.contributor.authorLam, K.-T.
dc.contributor.authorBhatia, C.S.
dc.contributor.authorLiang, G.
dc.contributor.authorYang, H.
dc.date.accessioned2014-06-17T02:37:38Z
dc.date.available2014-06-17T02:37:38Z
dc.date.issued2010-12-27
dc.identifier.citationShin, Y.J., Kwon, J.H., Kalon, G., Lam, K.-T., Bhatia, C.S., Liang, G., Yang, H. (2010-12-27). Ambipolar bistable switching effect of graphene. Applied Physics Letters 97 (26) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3532849
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/54973
dc.description.abstractReproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. An opposite sequence of switching with different charge carriers, holes, and electrons is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the on/off ratio of graphene resistive switching are suggested. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3532849
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3532849
dc.description.sourcetitleApplied Physics Letters
dc.description.volume97
dc.description.issue26
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000285768100031
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