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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2008.07.007
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dc.titleA time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET
dc.contributor.authorZhang, G.
dc.contributor.authorYoo, W.J.
dc.contributor.authorLing, C.H.
dc.date.accessioned2014-06-17T02:36:03Z
dc.date.available2014-06-17T02:36:03Z
dc.date.issued2008-11
dc.identifier.citationZhang, G., Yoo, W.J., Ling, C.H. (2008-11). A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET. Solid-State Electronics 52 (11) : 1773-1777. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2008.07.007
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/54834
dc.description.abstractA time-dependent technique is developed for carrier recombination-generation (R-G) lifetimes measurement in the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET). One gate is kept in strong accumulation, and the other gate is kept in strong inversion. A ramp voltage is applied to the accumulated gate, and the drain current transients are monitored for both carrier R-G lifetimes extraction. The time-dependent technique shows an extensive applicability, and its credibility is proved by simulation. © 2008 Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.sse.2008.07.007
dc.sourceScopus
dc.subjectCarrier lifetimes
dc.subjectMetal-oxide-semiconductor field-effect transistor
dc.subjectSilicon-on-insulator
dc.subjectTime-dependent technique
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.sse.2008.07.007
dc.description.sourcetitleSolid-State Electronics
dc.description.volume52
dc.description.issue11
dc.description.page1773-1777
dc.description.codenSSELA
dc.identifier.isiut000261358900014
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