Please use this identifier to cite or link to this item: https://doi.org/10.1109/MNANO.2013.2260461
DC FieldValue
dc.titleA bistable silicon nanofin: An ideal device for nonvolatile memory applications
dc.contributor.authorSoon, B.W.
dc.contributor.authorSingh, N.
dc.contributor.authorTsai, J.M.
dc.contributor.authorLee, C.
dc.date.accessioned2014-06-16T09:23:37Z
dc.date.available2014-06-16T09:23:37Z
dc.date.issued2013
dc.identifier.citationSoon, B.W., Singh, N., Tsai, J.M., Lee, C. (2013). A bistable silicon nanofin: An ideal device for nonvolatile memory applications. IEEE Nanotechnology Magazine 7 (2) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1109/MNANO.2013.2260461
dc.identifier.issn19324510
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/53909
dc.description.abstractWe present a silicon nanofin (Si-NF) that can be actuated bidirectionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force, which holds the Si-NF to either terminal without an on-hold bias, thus exhibiting bistable hysteresis behavior. The measured pull-in voltage (VPI) and reset voltage (VRESET) are 10 and -12 V, respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, it can be an ideal device for nonvolatile memory (NVM) applications. © 2007-2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/MNANO.2013.2260461
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/MNANO.2013.2260461
dc.description.sourcetitleIEEE Nanotechnology Magazine
dc.description.volume7
dc.description.issue2
dc.description.page24-28
dc.identifier.isiut000219744200005
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