Please use this identifier to cite or link to this item:
|Title:||A bistable silicon nanofin: An ideal device for nonvolatile memory applications||Authors:||Soon, B.W.
|Issue Date:||2013||Citation:||Soon, B.W., Singh, N., Tsai, J.M., Lee, C. (2013). A bistable silicon nanofin: An ideal device for nonvolatile memory applications. IEEE Nanotechnology Magazine 7 (2) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1109/MNANO.2013.2260461||Abstract:||We present a silicon nanofin (Si-NF) that can be actuated bidirectionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force, which holds the Si-NF to either terminal without an on-hold bias, thus exhibiting bistable hysteresis behavior. The measured pull-in voltage (VPI) and reset voltage (VRESET) are 10 and -12 V, respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, it can be an ideal device for nonvolatile memory (NVM) applications. © 2007-2011 IEEE.||Source Title:||IEEE Nanotechnology Magazine||URI:||http://scholarbank.nus.edu.sg/handle/10635/53909||ISSN:||19324510||DOI:||10.1109/MNANO.2013.2260461|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 7, 2020
WEB OF SCIENCETM
checked on Jul 31, 2020
checked on Aug 3, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.