Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSII.2011.2168010
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dc.titleA 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS
dc.contributor.authorBi, X.
dc.contributor.authorGuo, Y.
dc.contributor.authorBrinkhoff, J.
dc.contributor.authorJia, L.
dc.contributor.authorWang, L.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorLeong, M.S.
dc.contributor.authorLin, F.
dc.date.accessioned2014-06-16T09:23:20Z
dc.date.available2014-06-16T09:23:20Z
dc.date.issued2011-11
dc.identifier.citationBi, X., Guo, Y., Brinkhoff, J., Jia, L., Wang, L., Xiong, Y.Z., Leong, M.S., Lin, F. (2011-11). A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs 58 (11) : 719-723. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2011.2168010
dc.identifier.issn15497747
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/53891
dc.description.abstractThis brief presents the design of a band-tunable 60-GHz CMOS power amplifier using 65-nm standard CMOS technology. To achieve high gain and PAE over the whole 7-GHz frequency band, this amplifier utilizes a differential band-switching circuit to tune the center frequency to the channel in use, whereas high-Q transformer matching and deep-neutralized differential pairs are employed to achieve high gain and PAE in a narrow bandwidth. The amplifier achieves saturated output power of 12.3 dBm and peak PAE of 20.4% with a 1-V supply and a 63-mA current. The peak gain is 17.1 dB at 59 GHz and 16.2 dB at 53.5 GHz for the two different frequency bands, respectively. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TCSII.2011.2168010
dc.sourceScopus
dc.subjectBand tunable
dc.subjectmillimeter-wave integrated circuits
dc.subjectneutralization
dc.subjectpower amplifier (PA)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TCSII.2011.2168010
dc.description.sourcetitleIEEE Transactions on Circuits and Systems II: Express Briefs
dc.description.volume58
dc.description.issue11
dc.description.page719-723
dc.identifier.isiut000298051800003
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