Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSII.2011.2168010
Title: A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS
Authors: Bi, X.
Guo, Y. 
Brinkhoff, J.
Jia, L.
Wang, L.
Xiong, Y.Z.
Leong, M.S. 
Lin, F.
Keywords: Band tunable
millimeter-wave integrated circuits
neutralization
power amplifier (PA)
Issue Date: Nov-2011
Citation: Bi, X., Guo, Y., Brinkhoff, J., Jia, L., Wang, L., Xiong, Y.Z., Leong, M.S., Lin, F. (2011-11). A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs 58 (11) : 719-723. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2011.2168010
Abstract: This brief presents the design of a band-tunable 60-GHz CMOS power amplifier using 65-nm standard CMOS technology. To achieve high gain and PAE over the whole 7-GHz frequency band, this amplifier utilizes a differential band-switching circuit to tune the center frequency to the channel in use, whereas high-Q transformer matching and deep-neutralized differential pairs are employed to achieve high gain and PAE in a narrow bandwidth. The amplifier achieves saturated output power of 12.3 dBm and peak PAE of 20.4% with a 1-V supply and a 63-mA current. The peak gain is 17.1 dB at 59 GHz and 16.2 dB at 53.5 GHz for the two different frequency bands, respectively. © 2011 IEEE.
Source Title: IEEE Transactions on Circuits and Systems II: Express Briefs
URI: http://scholarbank.nus.edu.sg/handle/10635/53891
ISSN: 15497747
DOI: 10.1109/TCSII.2011.2168010
Appears in Collections:Staff Publications

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