Please use this identifier to cite or link to this item: https://doi.org/10.1109/JSSC.2011.2181677
Title: A 0.5-V 35-μ W 85-dB DR double-sampled δσ modulator for audio applications
Authors: Yang, Z.
Yao, L.
Lian, Y. 
Keywords: CMOS technology
Delta-Sigma modulator
Direct summation
Double sampling
Global-loop CMFB circuit
Input feedforward
Low power
Low voltage
Switched-capacitor circuit
Issue Date: Feb-2012
Citation: Yang, Z., Yao, L., Lian, Y. (2012-02). A 0.5-V 35-μ W 85-dB DR double-sampled δσ modulator for audio applications. IEEE Journal of Solid-State Circuits 47 (3) : 722-735. ScholarBank@NUS Repository. https://doi.org/10.1109/JSSC.2011.2181677
Abstract: This paper presents a 0.5-V 1.5-bit double-sampled δσ modulator for audio applications. Unlike existing double-sampled designs, the proposed double-sampled δσ modulator employs an input-feedforward topology to reduce internal signal swings, thereby relaxing design requirements for the low-voltage building blocks and reducing distortion. Moreover, in order to avoid instability and noise shaping degradation, the proposed architecture restores the noise transfer function (NTF) of the double-sampled modulator to its single-sampled equivalent with the help of compensation loops. In the circuit implementation, the proposed fully-differential amplifier adopts an inverter output stage and a common-mode feedback (CMFB) circuit with a global feedback loop in order to reduce power consumption. A resistor-string-reference switch matrix based on a direct summation quantizer is used to simplify the analog compensation loop. The chip prototype has been fabricated in a 0.13-μm CMOS technology with a core area of 0.57 mm . The measured results show that when operating from a 0.5-V supply and clocked at 1.25 MHz, the modulator achieves a peak signal-to-noise and distortion ratio (SNDR) of 81.7 dB, a peak signal-to-noise ratio (SNR) of 82.4 dB and a dynamic range (DR) of 85.0 dB while consuming 35.2 μW for a 20-kHz signal bandwidth. © 2012 IEEE.
Source Title: IEEE Journal of Solid-State Circuits
URI: http://scholarbank.nus.edu.sg/handle/10635/53879
ISSN: 00189200
DOI: 10.1109/JSSC.2011.2181677
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