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|Title:||A "thru-short" method for noise de-embedding of mosfets||Authors:||Nan, L.
|Issue Date:||May-2009||Citation:||Nan, L., Xiong, Y.-Z., Mouthaan, K., Issaoun, A., Shi, J., Ooi, B.-L. (2009-05). A "thru-short" method for noise de-embedding of mosfets. Microwave and Optical Technology Letters 51 (5) : 1379-1382. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.24330||Abstract:||A "thru-short" noise de-embedding method for MOSFETs is presented. The capability of the "thru-short" method has been validated through a comparison of measured and de-embedded noise parameters using different methods. It is shown that the "thru-short" method is reliable for on-wafer de-embedding of both S-parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc.||Source Title:||Microwave and Optical Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/53878||ISSN:||08952477||DOI:||10.1002/mop.24330|
|Appears in Collections:||Staff Publications|
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