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|Title:||2 × 2 Optical waveguide switch with bow-tie electrode based on carrier-injection total internal reflection in SiGe alloy||Authors:||Li, B.
|Issue Date:||Mar-2001||Citation:||Li, B.,Chua, S.-J. (2001-03). 2 × 2 Optical waveguide switch with bow-tie electrode based on carrier-injection total internal reflection in SiGe alloy. IEEE Photonics Technology Letters 13 (3) : 206-208. ScholarBank@NUS Repository. https://doi.org/10.1109/68.914322||Abstract:||Based on the total internal reflection and the plasma dispersion effect of SiGe alloy, a 2 × 2 intersectional rib optical waveguide switch with bow-tie electrode has been proposed and fabricated for the wavelength of 1.3-μm operation. The thickness of SiGe layer is 2.6 μm and the width is 9 μm. The branch angle of the switch is 2° and the bow-tie angle is 1.5°. The on-state crosstalk is -19.6 dB, the off-state extinction ratio is 38.5 dB and the off-state insertion loss is less than 1.70 dB. The switching time is about 180 ns.||Source Title:||IEEE Photonics Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/53850||ISSN:||10411135||DOI:||10.1109/68.914322|
|Appears in Collections:||Staff Publications|
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