Please use this identifier to cite or link to this item: https://doi.org/10.1049/el:20072054
Title: 0.18m CMOS dual-band UWB LNA with interference rejection
Authors: Gao, Y.
Zheng, Y.J.
Ooi, B.L. 
Issue Date: 2007
Citation: Gao, Y., Zheng, Y.J., Ooi, B.L. (2007). 0.18m CMOS dual-band UWB LNA with interference rejection. Electronics Letters 43 (20) : 1096-1098. ScholarBank@NUS Repository. https://doi.org/10.1049/el:20072054
Abstract: A CMOS dual-band ultra-wideband low noise amplifier (LNA) with interference rejection is presented. The proposed LNA employs a current reuse structure to reduce power consumption and an active notch filter to produce in-band rejection in the 5GHz WLAN frequency band. The load tank of the current reuse stage is optimised to provide an additional out-band attenuation in the 2.4GHz WLAN band. Measurement shows a peak gain of 19.7dB in the low band (3-5GHz) and 20.3dB in the high band (6-10GHz), while the in-band and out-band maximum rejections are 19.6 and 12.8dB, respectively. © The Institution of Engineering and Technology 2007.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/53840
ISSN: 00135194
DOI: 10.1049/el:20072054
Appears in Collections:Staff Publications

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