Integration of InGaAs/GaAs QW with Surface Plasmon and Photonic Bandgap Structure on its PL Emission

Abstract

Enhancing photoluminescence intensity of InGaAs/GaAs quantum well (QW) system in the near infrared (NIR) range by SPs is demonstrated for the first time. We fabricated an ordered array of Au nanostructures with relatively large features to match the InGaAs/GaAs QW emission wavelength with an insertion of thin SiO2 layer between Au and GaAs. More than 4-fold enhancement of the PL intensity was achieved. To match the longer QW emission wavelength and to further make the fabrication process easier, irregular array of Au nanodisks on the InGaAs/GaAs QW system with the 50 nm SiO2 layer was studied. A 2-fold enhancement in the photoluminescence intensity was obtained. We also report on an integration of SPs with photonic crystal on the thick quantum well barrier. With our design, a maximum 7.6-fold enhancement in the photoluminescence intensity has been obtained. All the experimental results were verified by numerical simulations.