Please use this identifier to cite or link to this item:
|Title:||Native oxide decomposition and local oxidation of 6H-SiC (0001) surface by atomic force microscopy||Authors:||Xie, X.N.
|Issue Date:||14-Jun-2004||Citation:||Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2004-06-14). Native oxide decomposition and local oxidation of 6H-SiC (0001) surface by atomic force microscopy. Applied Physics Letters 84 (24) : 4914-4916. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1728305||Abstract:||The observation of the native oxide decomposition and local oxide growth on 6H-silicon carbide (0001) surface induced by atomic force microscopy (AFM) was analyzed. Native oxide was decomposed and assembled into protruded lines, when the biased AFM probe was scanned over surface areas. Direct oxidation of silicon carbide (SiC) was achieved, when the probe was immobilized and longer bias duration applied. In terms of interface barrier height, the dielectric properties of AFM oxide on SiC were also investigated.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/53052||ISSN:||00036951||DOI:||10.1063/1.1728305|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.