Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1530722
DC FieldValue
dc.titleLow dielectric constant a-SiOC:H films as copper diffusion barrier
dc.contributor.authorKoh, Y.W.
dc.contributor.authorLoh, K.P.
dc.contributor.authorRong, L.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuang, L.
dc.contributor.authorSudijono, J.
dc.date.accessioned2014-05-19T02:53:06Z
dc.date.available2014-05-19T02:53:06Z
dc.date.issued2003-01-15
dc.identifier.citationKoh, Y.W., Loh, K.P., Rong, L., Wee, A.T.S., Huang, L., Sudijono, J. (2003-01-15). Low dielectric constant a-SiOC:H films as copper diffusion barrier. Journal of Applied Physics 93 (2) : 1241-1245. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1530722
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/53016
dc.description.abstractThe development of a low-K dielectric barrier based on silicon oxycarbide for copper damascence processes was discussed. The optimal process conditions allowing the deposition of silicon oxycarbide films with a dielectric constant of 3.74 and copper diffusion depth of 290 Å were identified. The composition of the films was studied and dielectric constant and dielectric breakdown of the films was also evaluated.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1530722
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1530722
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue2
dc.description.page1241-1245
dc.description.codenJAPIA
dc.identifier.isiut000180134200070
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