Please use this identifier to cite or link to this item:
|Title:||Enhanced probe nano-oxidation by charge pump effect in swept tip voltage cycles||Authors:||Xie, X.N.
|Issue Date:||2007||Citation:||Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2007). Enhanced probe nano-oxidation by charge pump effect in swept tip voltage cycles. Applied Physics Letters 91 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2817579||Abstract:||A probe-based nano-oxidation method for enhanced vertical oxide growth on silicon is presented. The technique involves cycling the tip biases between positive and negative polarities to produce high-aspect-ratio nano-oxides. Enhanced oxidation was observed to take place in the positive tip bias region as opposed to the negative tip voltage required for anodic oxidation. A model based on interface space charge accumulation and neutralization, O H- reactant mobilization, and diffusion is proposed to account for the oxidation enhancement observed under positive tip voltages. The proposed model is analogous to the transient charge pump effect which is at work when the polarity of a capacitor is switched. The results reveal the dynamical behavior of nano-oxidation under nonstatic fields which can be harnessed for fabricating oxide nanostructures with improved aspect ratios. © 2007 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/52912||ISSN:||00036951||DOI:||10.1063/1.2817579|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 15, 2019
WEB OF SCIENCETM
checked on Aug 8, 2019
checked on Aug 18, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.