Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn800711v
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dc.titleBottom-up growth of epitaxial graphene on 6H-SiC(0001)
dc.contributor.authorHuang, H.
dc.contributor.authorChen, W.
dc.contributor.authorChen, S.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-05-19T02:50:23Z
dc.date.available2014-05-19T02:50:23Z
dc.date.issued2008-12-23
dc.identifier.citationHuang, H., Chen, W., Chen, S., Wee, A.T.S. (2008-12-23). Bottom-up growth of epitaxial graphene on 6H-SiC(0001). ACS Nano 2 (12) : 2513-2518. ScholarBank@NUS Repository. https://doi.org/10.1021/nn800711v
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/52811
dc.description.abstractWe use in situ low temperature scanning tunneling microscopy (STM) to investigate the growth mechanism of epitaxial graphene (EG) thermally grown on Si-terminated 6H-SiC(0001). Our detailed study of the transition from monolayer EG to trilayer EG reveals that EG adopts a bottom-up growth mechanism. The thermal decomposition of one single SiC bilayer underneath the EG layers causes the accumulation of carbon atoms to form a new graphene buffer layer at the EG/SiC interface. Atomically resolved STM images show that the top EG layer is physically continuous across the boundaries between the monolayer and bilayer EG regions and between the bilayer and trilayer EG regions. © 2008 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn800711v
dc.sourceScopus
dc.subjectBottom-up growth
dc.subjectEpitaxial graphene
dc.subjectInterfacial graphene
dc.subjectScanning tunneling microscopy
dc.subjectSilicon carbide
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1021/nn800711v
dc.description.sourcetitleACS Nano
dc.description.volume2
dc.description.issue12
dc.description.page2513-2518
dc.identifier.isiut000262023600016
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