Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2004.03.062
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dc.title6H-SiC(0 0 0 1) phase transition: Evolution of the (6 × 6) magic clusters
dc.contributor.authorTok, E.S.
dc.contributor.authorOng, W.J.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-05-19T02:49:24Z
dc.date.available2014-05-19T02:49:24Z
dc.date.issued2004-06-01
dc.identifier.citationTok, E.S., Ong, W.J., Wee, A.T.S. (2004-06-01). 6H-SiC(0 0 0 1) phase transition: Evolution of the (6 × 6) magic clusters. Surface Science 558 (1-3) : 145-158. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2004.03.062
dc.identifier.issn00396028
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/52741
dc.description.abstractScanning tunneling microscopy (STM) is used to probe the local atomic structure of the 6H-SiC(0 0 0 1) surface together with X-ray photoelectron spectroscopy (XPS) in UHV. We report STM observation of localized clusters assembled in an ordered (6×6) arrangement after annealing the (3×3) phase at 1000 °C. These clusters are round in shape and possess a diameter of 14.3 ± 0.5 Å and a height of 2.3 ± 0.2 Å. Further annealing of the surface beyond 1000 °C caused the clusters to disappear and we observed the formation of a (6×6) ring-like structure at 1050 °C. XPS data show that the surface is still Si rich, unlike the (6√3×6√3) phase or graphitic honeycomb structures which normally formed above this temperature. Observation of defect and cluster formation, as well as tetramer agglomeration, suggests the rearrangement of the (3×3) structure as temperature increases. STM is used to study this mechanism leading to the formation of (6×6) clusters. We propose a model utilizing Si tetra-cluster units as building blocks to elucidate the structure of the (6×6) clusters and explain the structural transformation observed. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.susc.2004.03.062
dc.sourceScopus
dc.subjectClusters
dc.subjectScanning tunneling microscopy
dc.subjectSilicon carbide
dc.subjectSurface structure, morphology, roughness, and topography
dc.subjectSurface thermodynamics (including phase transitions)
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1016/j.susc.2004.03.062
dc.description.sourcetitleSurface Science
dc.description.volume558
dc.description.issue1-3
dc.description.page145-158
dc.description.codenSUSCA
dc.identifier.isiut000221728000015
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